BUK9510-55A,127 datasheet

Маркировка

BUK9510-55A,127
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9510-55A,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fall Time: 139 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 68nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 4307pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohms Rise Time: 155 ns Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.009 Ohms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 192 ns Part # Aliases: BUK9510-55A Other Names: 934056851127, BUK9510-55A
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14 шт.
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